Multilevel Non-Volatile Memristive Response in e-Textile

Suraj P. Khanna, Satish Singh, C. K. Suman, Nandan Kumar, Alok Dabi

Research output: Contribution to journalArticlepeer-review


Multilevel non-volatile (NV) resistive switching response is reported in electronic textile. The electroconductive textile as a phase change material displayed a typical write-once-read-many (WORM) memory behavior and switched abruptly from OFF to ON under the voltage-sweep mode. Furthermore, current-sweep characterization revealed a large number of intermittent multilevel NV states. A mapping of the single active and multiple passive devices across the 2-D planar structure of the textile allowed to achieve conduction modulation using a remote current-bias write/input stimulus. A comparative study of the wale and course directions in the textile displayed an anisotropic current spreading that may be utilized for selective memory writing/emulating neuron-like behavior. In addition, the textile also displayed the reset WORM or ReWORM effect, enabling it to revert to its initial high resistive state.

Original languageEnglish (US)
Pages (from-to)468-472
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number2
StatePublished - Feb 1 2023


  • Action potential
  • current controlled joule heating
  • electrotonic potential
  • multilevel resistive switching
  • neuron-like behavior
  • non-volatile (NV) memory
  • phase-change-material
  • reset WORM (ReWORM)
  • synaptic transmission
  • write-once-read-many (WORM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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