Abstract
Multilevel non-volatile (NV) resistive switching response is reported in electronic textile. The electroconductive textile as a phase change material displayed a typical write-once-read-many (WORM) memory behavior and switched abruptly from OFF to ON under the voltage-sweep mode. Furthermore, current-sweep characterization revealed a large number of intermittent multilevel NV states. A mapping of the single active and multiple passive devices across the 2-D planar structure of the textile allowed to achieve conduction modulation using a remote current-bias write/input stimulus. A comparative study of the wale and course directions in the textile displayed an anisotropic current spreading that may be utilized for selective memory writing/emulating neuron-like behavior. In addition, the textile also displayed the reset WORM or ReWORM effect, enabling it to revert to its initial high resistive state.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 468-472 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 70 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 1 2023 |
Keywords
- Action potential
- current controlled joule heating
- electrotonic potential
- multilevel resistive switching
- neuron-like behavior
- non-volatile (NV) memory
- phase-change-material
- reset WORM (ReWORM)
- synaptic transmission
- write-once-read-many (WORM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering